| 摘要 |
PURPOSE:To prevent device breakdown due to a parasitic effect by a method wherein a low value resistor is connected across the device emitter and the substrate lowest potential portion, in a device, of the multiplicity of devices using as collector the thin epitaxial layer on the substrate, wherein the collector potential is lower than the forward voltage at its own p-n junction. CONSTITUTION:A multiplicity of collector-forming thin n epitaxial layers 2 are scattered on a p type Si substrate 1, and p bases 3 and n emitters 4 are provided within the layer 2. The epitaxial layer 2 with a resistance of several tens of ohms is used as a resistor, the base and collector of the transistor 15 are short- circuited 9 to form a diode 15, and the emitter 4 is connected to a wiring metal electrode 10 (the lowest potential). When disturbance is introduced into the circuit and thereby an SCR effect works to trigger an arc, the voltage thereof falls (to a level sufficiently lower than the base-emitter forward bias voltage) due to the resistor 16, and the emitter potential and then the collector potential of the diode 15 rises. Accordingly, the forward bias from the substrate 1 to the collector is at once reversed, eliminating horizontal npn elements, the SCR effect and excess current, thereby preventing breakdown. |
