发明名称 |
High contrast alignment marker for integrated circuit fabrication |
摘要 |
A wafer marker is described for aligning masks with the wafer. The marker comprises a depression in the wafer which is defined by sloped sides and a pitted bottom. The sloped sides and pitted bottom do not directly reflect light as does the surface of the surrounding silicon and thus the marker appears as a darker region. The bottom of the depression is pitted by exposing the anode during a silicon plasma etching step.
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申请公布号 |
US4374915(A) |
申请公布日期 |
1983.02.22 |
申请号 |
US19810288519 |
申请日期 |
1981.07.30 |
申请人 |
INTEL CORPORATION |
发明人 |
AHLQUIST, C. NORMAN;HU, YAW WEN;SCHOEN, PETER F.;POENISCH, PAUL A. |
分类号 |
G03F9/00;(IPC1-7):G03F9/00;G03C11/00 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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