发明名称 SEMICONDUCTOR DEVICE
摘要 The bootstrap circuit of an EPROM is modified by establishing a cover (18) on the second domain (5) and the p-n junction (C7, C9) with a conducting layer produced by aluminum film (1-1.5 μm) in order to reprogram effectively, that is, cut off the light on the connection between a condenser and a MISFET not so as to reduce the voltage of a condenser used in the bootstrap circuit when an EPROM is used in a light room.
申请公布号 KR830000198(A) 申请公布日期 1983.02.21
申请号 KR19790004157 申请日期 1979.11.27
申请人 FUJITSU LTD 发明人 HIGUCHI MITSUO;MIYASAKA KIYOSHI
分类号 H01L27/15;(IPC1-7):H01L27/15 主分类号 H01L27/15
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