| 摘要 |
PURPOSE:To form a gate insulating film thin and reduce a threshold voltage, by leaving a semiconductor film as a part of an island under lead-out wirings of a gate electrode or a source, drain and gate and a bonding pad beside under an operating region. CONSTITUTION:After forming a gate electrode 15 on an insulating substrate 14, the entire surface is covered with a gate insulating film 16. Next, the entire surface is covered with a semiconductor thin film, and the electrode and lead-out wirings 18, 19 of the source and drain are formed thereon. Subsequently, the semiconductor film is etched with a resist pattern coating the operating region 20 and electrode wirings 18, 19 as a mask. Then, the gate insulating film 16 is etched resulting in the formation of a contact hole 21 with the gate electrode. Finally, the lead-out wiring of the gate and a bonding pad are formed. |
