| 摘要 |
PURPOSE:To easily prevent contamination of semiconductor substrate by particles of by-product generated at the upper surface of susceptor with simple structure in regard to a CVD film forming apparatus for forming the oxide film (SiO2) and nitride film (Si3N4) and polycrystalline silicon film (Poly-Si) etc. on the semiconductor substrate such as silicon wafer with the chemical vapor deposition (CVD) method. CONSTITUTION:The aluminum plate 3 is fitted by screw on the resistor heating type heater block 1 and the quartz plate 6 which provides the same thermal expansion coefficient as that of deposited oxide film and the thickness of several millimeters is further formed thereon at the specified position. The susceptor is formed in the double layers with the aluminium plate 3 and quartz plate 6, the wafer 4 is formed on such susceptor. This susceptor depositing the wafer is sent under the laminer flow nozzle 5 spraying the reaction gas for generating SiO2 and thereby the oxide film is deposited on the wafer 4 and quartz plate 6 by the chemical vapor deposition. Since the thermal expansion coefficients of the deposited SiO2 and said quartz plate 6 are almost equal, any distortion is not applied on the deposited SiO2 and generation of particles of SiO2 can be prevented. |
