| 摘要 |
PURPOSE:To strengthen adhesion between a photoconductive layer and an insulating layer and to raise durability, by etching an amorphous silicon layer for use in a photoconductive layer formed on a substrate, and forming an insulating layer on that layer. CONSTITUTION:A photoconductive layer made of amorphous silicon (a-Si) is formed in 5-80mum thickness by glow discharge, sputtering, or the like on a conductive substrate, this layer is etched to form 2-3,000nm preferably 50- 1,000nm roughness on the surface of the a-Si layer, and a 0.1-100mum thick insulating layer made of polyethylene, polyester, or the like is formed on this etched layer to complete a photosensitive layer. As the etching method of the a-Si layer, treatments using an etching solution, such as an aq. mixture of HF and NH4F, electron irradiation and plasma etching, etc. are embodied. |
