| 摘要 |
PURPOSE:To easily form a polycrystalline Si film only inside grooves formed on the surface of an amorphous insulator substrate, by using an amorphous or polycrystalline Si film formed by a CVD method as an Si film when forming an Si single crystal island on an amorphous insulator substrate. CONSTITUTION:A CVD Si film 2 is heaped on a quartz glass substrate 1 applied to a groove work by a CVD method. Next, an approximately flat surface is obtained by coating a resist film 3 on this CVD Si film 2. Subsequently, the resist film 3 is etched, and thus the resist film 3 is left only inside the groove. Next, the exposed Si film other than in the groove is etched. For this etching, an anisotropic reactive sputter etching using a gas of carbon tetrachloride (CCl4) or flon 13 (CClF3), flon 12 (CCl2F2), flon 13B1 (CF3Br), etc. is appropriate. In this manner, the CVD Si film 2 coated with the resist film 3 is formed only inside the groove on the quartz glass substrate 1. Finally, the CVD Si film 2 is formed only inside the groove by the reduction of the resist film 3 into plasma ash due to oxygen or removal due to an organic solvent, etc. |
