| 摘要 |
PURPOSE:To deliver a semiconductor memory device by completing the device after a manufacturing order placed by a user by forming a through hole opened in advance at the PSG film of an MOS transistor, then forming an aluminum wire film of the first layer, forming the PSG film of the second layer, and then waiting the user's order. CONSTITUTION:An SiO2 film 2 for isolating between elements is formed on a P type Si substrate 1, and an N type source region 3 and a drain region 4 are formed. An SiO2 film 5 is formed as a gate oxidized film on the substrate 1, a polysilicon film is grown thereon, and is then formed in the prescribed pattern, and a gate electrode 6 is formed. Further, an insulating film 21 formed of a PSG film is formed on the substrate 1, all PSG films 21 on the drain region 4 of all MOS transistors formed on the substrate are opened with windows, thereby forming through holes. Thereafter, an aluminum wire film 23 patterned on the film 21 is formed. The film 24 is formed on the film 24, through holes 26 for connecting the film 25 to the film 23 is formed on the film 24, and PSG films 27 for protecting the aluminum wire 25 and the film 25 are formed. |
