| 摘要 |
PURPOSE:To prevent the diffusion of an impurity to a semiconductor film by applying an electric field to a substrate which has impurity ions such as glass and ceramics, segregating the impurity contained in the substrate at one side of the substrate and forming a one-sided segregated layer. CONSTITUTION:An electrode 2 is provided on a substrate 1 which has impurity ions such as glass and ceramics and a high voltage is applied from a power source 3. Thus, the ions are segregated at one side of the substrate 1 due to the electric field by a high voltage, thereby forming a segregated layer 4 which includes muc impurity. This layer 4 is removed by lapping or the like, thereby preventing the diffusion of the impurity to the semiconductor film. |
