| 摘要 |
PURPOSE:To perform a small memory capable of writing with a low current by forming a memory cell in a bipolar transistor structure and breaking the insulation by a high voltage applied to the oxide film of a high resistance semiconductor layer connected to the emitter region of the transistor. CONSTITUTION:An epitaxial layer 2 grown on an Si substrate 1 is isolated via an isolation diffused region 3 to memory cells. The memory cell has an N-P-N bipolar transistor including an emitter region 4, a base region 5 and collector regions 2, 6, and one end of a high resistance polysilicon layer 7 is connected to the emitter region. A low resistance polysilicon wire 9 is formed in the state partly overlapped directly on the region 4 through an SiO2 film 8 thinly grown on the surface of the layer 7. The film 8 between the layers 7 and 9 existing on the overlapped region is the surface oxidized film of the polysilion with sufficiently low withstand voltage and is capable of readily breaking the insulation at the writing time. |
