| 摘要 |
<p>The side walls of semiconductor devices (1) such as lasers, light emitting diodes, photodiodes, phototransistors and avalanche photodiodes are provided with a sputtered coating to protect the devices or modify their reflection coefficients. The side walls are coated by placing the semiconductor device (1) on a substrate (2) made of the coating material, placing the substrate (2) with the semiconductor device (1) in an environment including energetic particles, and causing the energetic particles to bombard the substrate (2) and deposit it on the side walls of the device to form the coating (6). When the device is placed on a substrate made from the coating material, only the side walls of the device are coated and the top and bottom faces (4 and 5) are not coated.</p> |
