| 摘要 |
PURPOSE:To convert a polycrystalline semiconductor layer on a semiconductor substrate into a single crystal under irradiated laser beams without exfoliating the layer by forming films reflecting laser beams on the surface of the layer. CONSTITUTION:An insulating SiO2 film 12 is formed on an Si semiconductor substrate 1 at a specified position, and a polycrystalline Si layer 14 is formed. The surface of the layer 14 is heated and oxidized to form an SiO2 film 15, and an Si3N4 film 16 is formed on the film 15 at the position corresponding to the SiO2 film 12 by a CVD method. Using the film 16 as a mask the surface of the Si layer 14 is heated and oxidized again to increase the thickness of the part of the SiO2 film 15 corresponding to the opening 13 where the SiO2 film 12 does not exist. In this state Ar laser beams are irradiated. The films 16, 15 act as films reflecting laser beams, and the polycrystalline Si layer 14 is heated almost uniformly and converted into a single crystal Si layer 14' without causing exfoliation from the substrate 1. |
