| 摘要 |
PURPOSE:To evade deformation by quick heating and cooling, and devitrification by impurities by a method wherein a denseness nitrification silicon film is provided on a reactive tube heat-treating a semiconductor and a substrate constructing a wafer holder which is inserted in the tube. CONSTITUTION:A reactive tube and a wafer holder (carrier boat) use, as basic meterial, recrystallization silicon carbide, and its composite materials impregnated with silicon, quartz glass, nitrification silicon and carbon. With this structure, a denseness nitrification silicon film that contains 10% or less of porocity, 100ppm or less of Fe, or impurities, and 20ppm or less of Cu is coated on the surface of basic material in order to prevent deformation in quick heating and cooling, and devitrification. The film is 20-200mum in thickness to prevent the occurrence of pin-holes. Although it is preferable to provide this film on the whole surface, it is still good to provide this film on a portion directly exposed to the reactive environment. Thus a device with excellent proof against washing, oxidation, and heat can be obtained. |
