| 摘要 |
PURPOSE:To produce photo-detectors of high resolution and of image storing mode by a method wherein a photosensing target is fabricated in a way that single or laminated layer photoconductive material is deposited on a transparent conductive film, and an amorphous substance of (Si1-xCx)1-y(H)y is used as photoconductive material. CONSTITUTION:A transparent conductive film is deposited on a glass base 1 by sputtering a mixture of SnO2 and In2O3 on which an n type oxide layer 9 is produced by evaporation of CeO2. Then, an amorphous substance, silicon-carbon film 8, is formed by sputtering of silicon with boron additive and graphite of high purity on which amorphous silicon 7 of highly pure silicon is coated to provide the photosensing target of a vidicon. Chemical composition of the film 8 is as follows: (Si1-xCx)1-y(H)y where in case of 0.02<=x<=0.30 and 0.05<=y<=0.3, effective result can be obtained, however, photoconductive effect will be reduced in case of x>=0.6, and the carbon content under the condition of x<=0.3 can easily control its characteristics. High ratio resistance of 10<10>OMEGAcm or more can easily be obtained by this substance in which less trapping can take place so that good photoconductivity can be maintained. Photodetectors of such composition has high resolution, cause little burning and are of better image retention characteristics. |
