| 摘要 |
PURPOSE:To improve the rate of yield of semiconductor devices by a method wherein an orientation flat is provided perpendicular to the direction most distant from the direction <110> in a plane parallel to the crystal plane constituting a semiconductor wafer primary plane and retangular regions with sides with sides parallel or perpendicular to the flat are selectively diffused. CONSTITUTION:Selective diffusion is performed, in view of crystallographical anisotropy, on a semiconductor crystal to be developed into a semiconductor substrate. When a semiconductor device is built on a (111) substrate 7, an orientation flat (OF) 9 is formed crossing at a right angle a line of direction 8 that is 22.5 deg. deviated from the (anti 1,1,0) direction in a (111) plane. Using the OF9 as a reference, rectangular patterns with their sides perpendicular or parallel to the OF9 are selectively diffused for the formation of a diffused pattern 10. Stresses generated in the diffused region run perpendicular or parallel to the OF9, with a resultant direction of stresses not in agreement with the direction of side <110>. The same is applicable to a (100) substrate. |
