Controlled in situ etch-back,申请号US19810325933-传众专利搜索

发明名称	Controlled in situ etch-back
摘要	A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.
申请公布号	US4373989(A)	申请公布日期	1983.02.15
申请号	US19810325933	申请日期	1981.11.30
申请人	BEGGS, JAMES M. ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, WITH RESPECT TO AN INVENTION OF;MATTAUCH, ROBERT J.;SEABAUGH, ALAN C.	发明人	BEGGS, JAMES M. ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, WITH RESPECT TO AN INVENTION OF;MATTAUCH, ROBERT J.;SEABAUGH, ALAN C.
分类号	C30B19/12;(IPC1-7):H01L21/30	主分类号	C30B19/12
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