| 摘要 |
This semiconductor memory device arranges the memory-cell(MC) which can perform Write in each point of intersection between the Beat lead(B0,B1,..) and the word lead(W0,W1,..). The memory cell is connected in series with the information memory device(DM) and the PNP type transistor(TRM). The information memory device(DM) is connected with the beat lead and the base of the PNP type transistor(TRM) is connected with the word lead.
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