| 摘要 |
PURPOSE:To rialize a homogeneous growth of a film by a method wherein susceptor-suported semiconductor wafers with some specified distance between them are vertically arranged and a gas supply pipe provided between the tube inner wall and the susceptors injects gas in a direction 10-30 deg. apart from the center of the axis and the supply pipe itself rotates along the tube wall, in a vapor growth unit with a horizontally set reactor tube. CONSTITUTION:In a reaction tube 1 surrounded with a high frequency coil 4, a plurality of semiconductor substrates 3 on susceptors 2 are vertically arranged with some distance between them. In the gap between the wall and the susceptors 2, a gas supplying pipe 6 lies provided with a multiplicity of nozzles and the supply end of the pipe 6 is bent to run along the axis of the tube 1. In the tube wall opposite to the supply pipe 6, a suction port 5 is provided wherethrough the used gas is taken out. In this construction, the direction of the nozzles is so oriented that the injected gas therefrom is 10-30 deg. deviated from the tube central axis, and the supply pipe 6 is caused to rotate along the tube wall. This setup ensures a homogeneous distribution of impurities. |
