| 发明名称 |
Plasma polymerized ethane for interlayer dielectric |
| 摘要 |
A plasma polymerized ethane thin film deposited on a variety of substrates has been discovered to be an improved interlayer dielectric. It is a material having property of high dielectric strength and unique low dielectric constant. It also has advantages of depositing pinhole free, crack resistant with good step coverage and low deposition cost.
|
| 申请公布号 |
US4374179(A) |
申请公布日期 |
1983.02.15 |
| 申请号 |
US19800217645 |
申请日期 |
1980.12.18 |
| 申请人 |
HONEYWELL INC. |
发明人 |
LIN, JACOB W.;WEINMAN, LESLIE S. |
| 分类号 |
H05K3/28;B32B27/06;H01B17/60;H01L21/312;H01L23/498;H01L27/01;H05K1/00;H05K1/03;H05K3/46;(IPC1-7):B32B9/04;B32B27/32;B05D3/06 |
主分类号 |
H05K3/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
