| 发明名称 |
METHOD FOR FABRICATING NON-REFLECTIVE SEMICONDUCTOR SURFACES |
| 摘要 |
<p>A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.</p> |
| 申请公布号 |
CA1141456(A) |
申请公布日期 |
1983.02.15 |
| 申请号 |
CA19790341843 |
申请日期 |
1979.12.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HANSEN, THOMAS A.;JOHNSON, CLAUDE, JR.;WILBARG, ROBERT R. |
| 分类号 |
H01L31/04;H01L21/302;H01L21/3065;H01L31/02;H01L31/0236;(IPC1-7):01L21/22 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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