| 摘要 |
PURPOSE:To obtain a wire bonding pad with no generation of broken wires when subjected to alumite treatment by dividing the pad into two, upper and lower, layers of Al and using the lower layer as the pad wiring layer while the upper layer as the bonding portion. CONSTITUTION:The first Al layer 6, which comprises a part of a bonding pad 28 and acts as the lower wiring layer for connection with other portions, is formed via the first layer-to-layer insulating film 5 on a Si substrate 1 having semiconductor elements thereupon. On this first Al layer is formed the second Al layer 9 via the second layer-to-layer insulating film 7. In this process a 1% of Cu is contained in the second Al layer to prevent electro-migration and a bonding portion 8, as a part of the pad 28, is also formed in this layer. This stacked structure of the pad 28, i.e., the layer 6 and the bonding portion 8, prevents broken wiring at the pad 28 when an alumite layer 12 is formed. Finally, the pad 28 is connected with an external connection lead 4 by a wire 10 and the whole structure is molded with a resin 31. |
