| 摘要 |
PURPOSE:To effect highly efficient photoelectric conversion by laminating semi- amorphous n type and p type layers and an intrinsic or substantially intrinsic layer of amorphous substance which is produced in such a manner as H2, halogen or alkaline metal is added to the n type semi-amorphous silicon on the side of the light incidence surface. CONSTITUTION:A p type layer 53, intrinsic layer 51 and n type layer 52 of silicon are formed on a metallic substrate by CVD plasma process adding SiH, B2H6, PH3, and NH3. The layer 56 is amorphous AS, and the layer 60 gradually grows SAS of semi- amorphous substance in the direction of an electrode 54. Electromagnetic energy is increased as the intrinsic layer is accumulated and Fermi level is caused to come closer to the conduction band to promote mobility of the holes and to increase current flow. In addition, optical absorption is reduced by changing the n type layer 52 and its neighborhood into SAS to cause holes to be generated at deeper level. Therefore, diffusion distance of holes to the electrode on the reversed side can be shortened so as to increase electric current. When the p type layer 53 is formed on the substrate, the layer is caused to compose two layers, SAS and AS layers, and conduction bands and valence bands are continuously junctioned at the hetero junction faces. By such a setup, highly efficient photoelectric conversion can be achieved. |
