发明名称 |
Process for fabricating a high capacity memory cell |
摘要 |
A method of fabricating an array of high capacity memory cells comprises forming a transfer gate over each cell area spaced from an adjacent isolation region to define a storage region in the semiconductor surface between the transfer gate and isolation region and to define a bit line region on the other side of the transfer gate; forming a shallow ion layer of first conductivity type in the storage region self-aligned with the transfer gate; forming a deep ion layer of opposite conductivity type in the storage region self-aligned with the transfer gate; forming a storage gate over a portion of the storage region spaced laterally from the transfer gate to form a gap between the storage and transfer gates; and introducing ions of the first conductivity type into the portion of the storage region defined by the gap to at least neutralize some ions in the deep ion layer.
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申请公布号 |
US4373250(A) |
申请公布日期 |
1983.02.15 |
申请号 |
US19800207264 |
申请日期 |
1980.11.17 |
申请人 |
SIGNETICS CORPORATION |
发明人 |
MALWAH, MANOHAR L. |
分类号 |
H01L27/10;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L21/26 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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