| 摘要 |
PURPOSE:To enable plasma anodization and thereby to obtain MOSFET even when insular poly-Si is connected onto an insulated substrate, by introducing poly-Si of high conductivity containing a large quanitiy of impurity. CONSTITUTION:Poly-Si 15 containing a large quantity of P is connected to insular poly-Si 2 on a glass plate 1. A metal electrode 16 is provided on the poly-Si 15 at the periphery of the substrate 1, and a bias positive to an O2 plasma generating region is given to the electrode 16 to apply plasma anodization. After the poly-Si 15 is transformed thereby into SiO2, it is made to remain selectively as a gate oxide film 17. A gate electrode 6 and source and drain wirings 7 and 8 are connected selectively onto the oxide film 17 and exposed poly-Si 4 and 5, respectively, diffusion layers 11 and 12 are provided in offset regions 9 and 10 by the implantation of ions, and thus the device is cmpleted. By this constitution, n-channel MOSFET is obtained, and a p-channel device is obtained by the implantation of B ions, while a time for the anodization is prolonged. In both cases, the characteristics are excellent. |
