| 摘要 |
PURPOSE:To obtain the semiconductor device which can acquire the normal function of a semiconductor element and has high reliability by forming a pad which can prevent damage to an insulating protective film through bonding in a wire bonding process. CONSTITUTION:A conductive film 21 consisting of a substance such as polysilicon is thinly formed into a region to be wire-bonded. The conductive film 21 is shaped at the same time as a gate such as a gate consisting of the polysilicon of a MOS transistor forming an integrated circuit by utilizing a process such as a process (a vapor growth method) shaping the gate compose of said polysilicon. A metallic wiring film 13 made up of aluminum, etc. is molded onto the surface of the conductive film 21, the metallic wiring film 13 connects a section between the semiconductor elements and forms the integrated circuit as mentioned above, and a passivation film 14 is shaped normally onto the surface except the pad. An impact, such as pressure, heat, etc. is given in the substrate 11 direction from the surface of the metallic wiring film 13 through wire bonding, but the conductive film 21 consisting of the polysilicon, etc. functions as a buffer material, and the impact is largely prevented. |
