| 摘要 |
PURPOSE:To allow easily forming an electrode with nickel as its main constituent by a close contact to a transparent conductive film provided as the electrode of an amorphous semiconductor (NCS), by solution-removing a resist previously formed on the lower side of a metallic layer by an organic solvent and lifting off the metal. CONSTITUTION:The figure A represents an NCS1 having a structure of a transparent conductive film 3, P20, I19 and N18 on a transmittance substrate 7. As shown in the figure B, resist films 31 are formed selectively on these base bodies by a screen printing method. Next, the metallic film 32 is formed by an electroless plating method. Thereafter, the whole of this is immersed in a resist remover, e.g. trichlene solution, and the resist film 31 is solution-removed by applying ultrasonic waves. At the result, the metallic film on the resist film is exfoliated resulting in the metallic film 34 on a TCF3 and the other metallic film 33 on the semiconductor film as shown n the figure C. |
