| 摘要 |
PURPOSE:To utilize incident light at its maximum with high efficiency by forming the antireflection film of a section with no electrode in predetermined thickness in the optoelectric transducer for a photosensor or a solar cell. CONSTITUTION:A semiconductor substrate 1 is thermally oxidized in an oxygen atmosphere, and a silicon oxide film is formed. Resists are selectively shaped to the peripheral section of the surface and the back of a semiconductor 1, only the upper surface of the semiconductor is exposed through selective etching, and the ARF3 of an oxide is formed to the whole upper surface is such a manner that it is added to a substance such as TiOx and P2O5 is mixed to TiOx by 0.1-10%. The antireflection film made of TiOx, etc. is shaped through heating. resist films 5 are printing-formed except electrode window holes 8, 8' by using a screen mask through a printing method, etc., the ARF in the window holes 8, 8' is removed by an acidic etching liquid, and the surfaces of a semiconductor layer 4 are exposed at 10, 11. The whole is immersed in a nickel electroless plating liquid forming a metallic electrode, and nickel is deposited and plated onto the surfaces 10, 11 of the semiconductor and the resist films 5. The resists are removed by an organic solvent, and unnecessary metal is lifted off. Accordingly, the external extracting electrode hole 8 and the pectinate type electrode hole 8 also take the same form, and an electrode 13 and an external extracting electrode 12 shaped while the metallic electrodes are fast stuck onto the semiconductor layer are formed. |
