| 摘要 |
PURPOSE:To obtain a minute wiring pattern in the semiconductor device by utilizing technique through which a metallic conductor is thinned. CONSTITUTION:Wall surfaces 11a1-11a3 from which minute wiring 12a is extended to an insulating layer and a stage difference section 28a with a wall surface continueing to said wall surfaces and bent are formed, and a wiring material layer is shaped onto the section 28a. At least region containing the right above section of said wall surface bent is coated with the mask layer 13 of the wiring pattern, ion-beams are obliquely irradiated to etch said wiring material layer, the minute wiring 12a is formed at the shadow of said wall surface, and wiring, which is coupled with the minute wiring and extends in the direction crossing with the wiring, is shaped under the mask layer at the same time as the formation of the wiring 12a. |
