| 摘要 |
PURPOSE:To utilize incident light at its maximum with high efficiency by forming all antireflection film with no electrode in predetermined thickness in the titled device for a photosensor or a solar cell. CONSTITUTION:A semiconductor substrate 1 is thermally oxidized, and a silicon oxide film is formed. Resists are selectively shaped to the peripheral section of the surface and the back of a semiconductor 1 to the upper surfaces of the film, only the upper surface of the semiconductor is exposed through selective etching, and the ARF3 of an oxide is formed to the whole upper surface. The antireflection film made of TiOx, etc. is molded. Resist films 5 are printing-formed except electrode window holes 8, 8' by using a screen mask, the ARF in the window holes 8, 8' is removed by an acidic etching liquid, and the surfaces of a semiconductor layer 4 are exposed 10, 11. The whole is immersed in a nickel electroless plating liquid forming a metallic electrode. The resists are dissolved and removed, and an electrode 13 and an external extracting electrode 12 are constituted. Spaces can be formed among the ARF and the electrodes because the ARF adjoins to the side periphery in the electrodes 13, 12 and the electrodes are plated to the whole electrode holes in the same form. |
