| 摘要 |
PURPOSE:To obtain an optical element using the optical activity of a dielectric thin film and requiring low voltage for control by forming a metallic oxide film as a dielectric valve and a pair of electrodes on a light transmitting substrate. CONSTITUTION:A film of >=1 kind of metal selected from Ta, Ti, Al, Zr, Hf and Nb is vapor-deposited on a light transmitting substrate 31 and subjected to electrochemical anodic oxidation or thermal oxidation to form a metallic oxide film 32 as a dielectric valve. On the film 32 a light transmitting and electrically conductive film 33 of SnO2, In2O3 or the like and a pair of electrically conductive electrodes 34 are formed. The resulting optical element is an element for varying the angle of transmitted light by making use of a change in the refractive index of the metallic oxide film due to a change in the temp., and it is expected that the element is applied to a light shutter or an optical memory element in combination with a suitable polarizing plate. |
