发明名称 |
High switching speed semiconductor device containing graded killer impurity. |
摘要 |
A semiconductor device for controlling a current comprises a pn junction formed of a high resistivity region and a relatively low resistivity region, a graded distribution of dislocation density is formed in the high resistivity region and decreases with an increase in distance from the pn junction, also graded distribution of lifetime killer concentration is formed in the high resistivity region and decreases with an increase in distance from the pn junction in correspondence with the graded distribution of dislocation density. |
申请公布号 |
EP0071276(A2) |
申请公布日期 |
1983.02.09 |
申请号 |
EP19820106905 |
申请日期 |
1982.07.30 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, KENSUKE;MATSUZAKI, MITSUYUKI |
分类号 |
H01L21/322;H01L29/167;H01L29/861;(IPC1-7):H01L29/16 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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