| 摘要 |
PURPOSE:To obtain the device proper for grounding an N<+> emitter by a method wherein an N<-> collector is formed to one part of one main surface of a P type Si base base body and the N<+> emitter extending over a wide area in the other main surface, an electrode is attached and the emitter electrode is connected to a package by the good conductor member of heat and electricity. CONSTITUTION:The N<-> collector 9 and a P<+> electrode extracting layer 8a are formed to one part of one main surface of the P base layer 8, a base lead B is attached, an N<+> electrode extracting layer 9a is shaped and a collector lead C is fitted. The N<+> emitter 10 is formed extending over the wide area in the other main surface, and the emitter electrode 10a is soldered 11 to an emitter disk E. A section except an electrode attaching section is coated with SiO2 2 in the main surface of the Si base body, and the whole surface is coated with a protective film. The device according to this constitution is proper for grounding the emitter, radiation is excellent, and assembly does not differ from conventional devices at all and is easy. |
