| 摘要 |
PURPOSE:To reduce adverse effects of a lattice defect, by a method wherein a metal thin film pattern is formed on a compound semiconductor substrate, and under this condition, the metal thin film pattern is heat-treated, thereby to localize a denatured layer produced by the heat treatment. CONSTITUTION:On an n type GaP single crystal substrate 11, an n type GaP epitaxial layer 121 and a P type GaP epitaxial layer 122 are successively grown to produce a compound semiconductor substrate. Then, an Au-Be film 131 and an Au-Ge film 132 are formed. Then, the film 131 is patterned to form a pattern 14, and the substrate 11 is heat-treated. At this time, an ohmic contact is formed between the pattern 14 and the layer 122, and also on the rear side of the substrate 11, an ohmic contact is formed between the rear surface and the film 132. By the above-mentioned heat treatment, a denatured layer 17 is localized only at the electrode ohmic contact portion, thereby making it possible to prevent the adverse effects of a lattice defect on the p-n junction in the portions other than the ohmic contact portion of the layer 122. |
