| 摘要 |
PURPOSE:To obtain the titled member with superior photoconductivity, heat resistance and resistance to an optical structural change by laying a photoconductive layer of amorphous chlorinated silicon on a support and an attraction layer of an electron accepting molecule or an electron donative molecule on the surface of the photoconductive layer. CONSTITUTION:A photoconductive layer of amorphous chlorinated silicon is laid on a support, and on the surface of the layer an attraction layer of an electron accepting molecule for amorphous chlorinated silicon such as O2, 1,5-dinitronaphthalene or phthalic anhydride or an electron donative molecule such as NH3, H2O, naphthalene or anthracene is laid. The resulting image forming member has remarkably superior heat resistance and resistance to an optical structural change. By doping the photoconductive member with a substance for reducing the resistance such as Ge, much superior photoconductivity is obtd. |
