| 摘要 |
PURPOSE:To improve the yield of manufacturing a semiconductor integrated circuit device and the accuracy of the device by maintaining the width of an insulator isolating layer between crystalline silicon island regions isolated via an insulator substantially constant with the with necessary at the minimum as a reference. CONSTITUTION:Isolation regions (insulator isolating layer) are provided among rectangular single crystal island regions 41-44. By considering the case that no island region 43 now exists, a wide width W5 is presented in the width W3 of the prescribed region between island regions 41 and 42 in addition to the similar narrow width W4 in the region between the island regions 42 and 44. Then, a single crystal silicon island region 43 is forcibly formed in the region having the width W5. In this manner, the width of the isolating region in the region having the wide width W5 can be reduced to the width necessary for the minimum determined by the withstand voltage. |
