| 摘要 |
PURPOSE:To obtain a semiconductor device which has a good yield and a high reliability by forming a reverse conductive type region at a part of the multicrystalline silicon layer of two layers and employing it for the connection of the diffused layer to a metallic wire. CONSTITUTION:The second conductive type region 2 is formed on part of the surface of the first conductive type substrate 1, and the first polycrystalline silicon layers 5, 5' which have gate electrodes in the respective regions are formed. After the first and second conductive type diffused layers 7, 7' and 8, 8' are then formed, contacting windows 13, 14 are formed. The second polycrystalline silicon layers 15, 18 are formed on the overall surface, and the first or second conductive type impurity is introduced. Further, an impurity having reverse conductive type to the previous impurity and higher density than the previous impurity is selectively introduced. The second polycrystalline silicon layers 15, 18 are selectively removed, thereby forming the electrode of the diffused layer. Since the connection of the layers 7, 7', 8, 8' to wires 22 is performed through a polycrystalline silicon layer, the diffused layer is not shortcircuited by the wire 22 to the substrate 1 and the P type well 22. |
