| 摘要 |
PURPOSE:To realize good ohmic contact between a substrate metal layer and a thin film by exposing the substrate to hydrogen plasma beforehand when a semiconductor film with hydrogen added thereto is grown on a metal layer provided on the substrate surface in a semiconductor thin film growing unit. CONSTITUTION:This relates to a method of the vapor phase growing of a thin film of amorphous Si, semiconductor fine crystals, amorphous Ge, amorphous SiC, or the like, all with H added thereto, on a substrate covered with metal in a semiconductor thin film growing unit. Prior to the film growing process, the metal layer coating the substrate is exposed to hydrogen plasma for the reduction of the oxide film on the surface. This method enables ohmic contact to be established with high reproducibility, even in the case said contact is not available due to the presence of high or wide barriers or impurities hampering the realization of ohmic contact between a metal layer and a semiconductor thin film. |
