| 摘要 |
PURPOSE:To obtain a photomask having a fine and accurate mask pattern faithful to a resist pattern by treating a mask substrate with an inorg. alkali soln. prior to an etching stage so as to enable uniform etching independently of a resist scum layer remaining on the mask substrate. CONSTITUTION:A mask substrate is coated with an electron beam resist polymer contg. halogen represented by the general formula such as polytrifluoroethyl alpha-chloroacrylate, and the coated substrate is pattern wise exposed to electron beams and developed. The mask substrate is then treated with an aqueous soln. of inorg. metallic salt prior to chemical etching. Thus, defects during chemical etching due to a resist scum layer remaining on the substrate after development can be eliminated thoroughly, and the resulting photomask has a small pattern conversion difference and is faithful to the resist pattern, fine and accurate. |
