| 摘要 |
PURPOSE:To improve the surge-resistant strength of a normal planar type PN junction without damaging the degree of integration by forming one part of a current path between the opposite two electrode windows of the junction into a low-concentration impurity layer forming the junction. CONSTITUTION:A V-shaped groove is shaped from the surface of the low-concentration epitaxial layer 2 forming the PN junction in a region held by electrodes 6, 7, and coated with an SiO2 film 4d. An interface 8 between the SiO2 film 4d and an Si crystal shapes the effective distance of 1.5-2 times as long as the case when there is no V-shaped groove. Accordingly, the surge resistant strength is improved without increasing an occupied area. When surge having polarity reverse-biasing the PN junction is applied transiently, the V-shaped groove or the semicolumnar insulating layer of SiO2 may be formed to the low concentration layer because the greater part is applied to the low-concentration layer side. According to this constitution, the surge resistant strength can be improved without increasing the occupied area. |
