| 摘要 |
PURPOSE:To simplify the manufacturing steps by simultaneously forming an ultrafine pattern by a photolithography and a reflection preventive film and using the preventive film as a mask at the time of forming an electrode. CONSTITUTION:Phosphorus is deposited in a P type Si semiconductor substrate 4 of index (100) to sinter it in N2 gas, an oxidized film of the front surface and a diffused layer on the back surface are removed, and a dry film-shaped resist film 1 is coated. Subsequently, it is patterned by a photoetching method. Then, a reflection preventive film 2 is formed on the surfaces of the film 1 and the substrate 4, is baked, and the film 1 and the film 2 on the film 1 are removed. Thereafter, with the film 2 as a mask it is electrolessly plated with nickel, thereby simultaneously forming electrodes 3 and 5. |
