发明名称 VARIABLE WAVELENGTH SEMICONDUCTOR LASER
摘要 PURPOSE:To vary the wavelength of a laser oscillation by varying the vibration frequency of a pectinated electrode supersonic wave vibrator which propagates a surface elastic wave formed on a light enclosure layer. CONSTITUTION:A P-GaAs layer 3 becomes an active layer for enclosing a carrier and a light and emits a laser light toward an arrow 10. Part of the diode is notched to expose the layer 3, an insulating film 11 is formed on the layer 3, and a pectinated electrode supersonic wave vibrator IDT 12 is provided on the film 11. When an electric field of special frequency is applied to the IDT, an elastic surface wave is generated, and is propagated in a light emitting direction along the layer 3. In this manner, a single longitudinal mode oscillation can be produced. When the vibration frequency of the vibrator IDT 12 is varied, the laser oscillation wavelength can be varied.
申请公布号 JPS5821888(A) 申请公布日期 1983.02.08
申请号 JP19810120852 申请日期 1981.07.31
申请人 TATEISHI DENKI KK 发明人 OOTA NORIHIRO;MORI KAZUHIKO;MATANO MASAHARU;YAMASHITA MAKI
分类号 H01L41/08;H01S3/02;H01S3/06;H01S3/105;H01S3/106;H01S5/00;H01S5/02;H01S5/042;H01S5/06;H01S5/0625;H01S5/125;H01S5/40;H04B10/27;H04B10/272;H04Q3/52 主分类号 H01L41/08
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