| 摘要 |
PURPOSE:To prevent the reduction of the sense level margin which is caused by the variance of the threshold voltage within a memory cell and the fluctuation of the power supply voltage/temperature, by setting the sense level of an output data based on the reference level given from a reference circuit. CONSTITUTION:A reference circuit 2 consisting of a memory cell which is equal to an ROM cell 1 sets the reference level between the minimum potential VHMIN of a high level and the maximum potential VLMAX of a low level of data. Based on this reference level, a sense amplifier 3 sets the sense level of the output data to the outside. Based on this sense level, the high or low level is detected for the data which is read out of the ROM1 onto a data line. Thus an output level is obtained. |
