| 摘要 |
PURPOSE:To obtain uniform and excellent picture quality over the entire picture, by forming the 2nd semiconductor region with an impurity concentration than that of the 1st semiconductor region through an SiO2 film produced in the forming of the 1st semiconductor region taken as a mask. CONSTITUTION:A layer 35 is formed by implanting B with a density of about 4X10<11>/cm<2>. After the removal of a resist 34, the layer 35 is expanded to form a P region 36 and an SiO2 film 37, 0.6mum thick. B is implanted with the density of about 4X10<18>/cm<2> from the opening of the film 37 and the ion implanted layer is succeedingly expanded to form a P<+> region 38 and an SiO2 film 39. The junction capacitance of a p-n junction photodiode is almost determined with the impurity concentration of a region 46 and the impurity of as region 47 is almost independent, then the junction capacitance with an n type diffusion layer being a parasitic capacitance of signal lines can be decreased. |
