| 摘要 |
PURPOSE:To reduce the reflection factor on the surface of a semiconductor over a wide wavelength region by a method wherein a reflection-preventing film of 600-1,000Angstrom in thickness, having T2OX (X=0.5-2.2) as a main ingledient and containing a metal oxide with the reflective index of 1.7-2.4, is deposited on the light-irradiating surface of the semiconductor on which photoelectromotive force can be generated. CONSTITUTION:A PSG film is deposited on a p type crystal or polycrystalline semiconductor substrate 1, the p in the film is diffused by performing a heat treatment, and an n<+> type layer 2 is obtained. Then, a film 3 of 600-1,000Angstrom in thickness, to be used for a reflection-preventing film, containing silicon oxide and the like with the reflective index of 1.7-2.4 and having TiOX (X=0.5-2.2) as a main ingredient, is screen-printed on the layer 2 and a calcinating treatment is performed on the above. Subsequently, a resist film 9 is selectively provided on the film 3, an Al film is covered on the whole surface, and the film 3 at the exposed part is removed together with the Al film 7' located above the film 3 by performing etching using a fluoric acid solution. Thus, the device with a comb-type Al electrode 7 and the film 3 on the surface is obtained, and an Al electrode 6 is deposited on the back side too. |
