| 摘要 |
PURPOSE:To obtain an infrared light emitting diode having a long life and high reliability by a method wherein the II group element to be made as P type impurities is diffused in high concentration in the P type region of a compound semiconductor crystal provided with a P-N junction, and the heat treatment is performed in an atmosphere not containing the II group element to promote rearrangement of the introduced II group element to the position of crystal lattice. CONSTITUTION:An N type GaAs layer 7 and a P type GaAs layer 8 are made to grow liquid phase epitaxially in succession on an N type GaAs substrate 6, and moreover additional diffusion is performed to the layer 8 using Zn to form the P<+> type region 9. After then, the heat treatment is performed at 600 deg.C for 15-24hr in the atmosphere having no existence of a diffusion source consisting of Zn or a compound containing Zn to promote rearrangement of diffused Zn to the position of crystal lattice. Accordingly influence of thermal distortion, etc., remaining inside of the crstal can be removed, and the P-N junction having the stable characteristic can be enabled to obtain. |
