| 摘要 |
PURPOSE:To utilize a single crystal Si thin film on an insulating film by reversing the rear surface by a method wherein the insulating film is made on the surface of an epitaxial layer on the single crystal Si substrate and the epitaxial layer is exposed by removing the substrate at the rear surface. CONSTITUTION:A p<+> layer 11 is made on the surface of a single crystal Si substrate 1 to epitaxially form single crystal Si 2. Next, after stacking poly Si 3 by SiO2 21 and a CVD method, etching is done by a mixed solution of etylenediamine + water + pyrocatechol and the substrate 1 is removed by using the p<+> layer 11 as stopper. Furthermore, for a purpose, the removal of etching is applied to the p<+> layer 11 for mirror surface polishing. This composition has far the better crystalization than SOS crystal and a single crystal thin film inducing no impurity such as Al is obtained. Therefore, the single crystal thin film is suitable for a high-speed operating element or the like. |
