| 摘要 |
PURPOSE:To prevent reaction products from adhering to the substrate surface so that metal thin film corrosion may be avoided even without post-conditioning by heating a sample table to raise the temperature of a substrate to be processed and applying reactive sputter etching. CONSTITUTION:The interior of a table 1 in a tubular chamber 5 is provided with hot water (30-80 deg.C) so as to raise the temperature of a substrate 3 being retained on the table 1, and Al thin film wiring on the substrate is then subjected to etching under conditions of a CCl4 flow rate of 500cc/min, 320mm. Torr and 1.25A high-frequency current. This constitution prevents the adhesion of any Cl-system reaction products to the substrate surface; therefore, no corrosion will result without post-conditioning. This constitution can also apply to metals other than Al. |
