| 摘要 |
PURPOSE:To obtain an optoelectric transducer having a large ope circuit voltage by a method wherein when the optoelectric transducer consisting of a P-N junction is to be manufactured, the Fermi levels of semiconductor layers to constitute the junction are made as in the grade enabled to contract in the valance band respectively, and the difference between the Fermi levels of the P type and the N type semiconductors is made large. CONSTITUTION:A semiconductor layer 51 consisting of the P type SAS structural semiconductor layer 52 having wide energy band width, an I type layer 56 and the N type SAS structural semiconductor layer 53 having wide energy band width is formed on a stainless substrate 50, a transparent and conductive film 54 is adhered on the layer 53 side, and light 55 is irradiated thereto. At constitution thereof, the layers 52, 53 contain carbon or nitrogen of 5-50%, and moreover amorphous silicon having the crystallinity of 10-2,000Angstrom largeness and containing hydrogen or a halogen element for the center of recombination is used. Moreover thickness of the layer on the light irradiating side is made as 100- 700Angstrom , and thickness of the layer on the back side is made as 200-3,000Angstrom . |
