| 摘要 |
PURPOSE:To increase the high speed reading out capacity of the signal electric charge and to prevent the reduction of the working range with a simple configuration, by subjecting the period when signal electric charges stored in the photosensitive section are read out to 4-phase driving and the period when electric charges are shifted from the photosensitive section to the transferring section to single-phase driving. CONSTITUTION:An N<+> layer 21 and the 1st insulating layer 22 are formed on a P type semiconductor substrate 20 of an IT-CCD image sensor of the interline transferring system, and the 1st layer of polysilicon electrodes 231-233 are formed on the layer 22, and then, the 2nd insulating film 25 is formed on the electrodes 231-233. On the film 25 the 2nd layer of conductor electrodes having low resistance 241-243 are formed and N<-> layers 271 and 272 of low impurity density are formed on the surface of the N<+> layers 21 underneath the electrodes 241-243. Switches 271 and 272 are connected between terminals of each pair of electrodes 241 and 232 and 242 and 233. Then, the reading out period of the signal electric charge stored in the photosensitive section of the CCD is set to 4-phase driving bardor by 4-phase clocks phi1-phi4 and the transferring period of the electric charge from the photosensitive section to the transferring section is set to single-phase driving to be performed the clocks phi1-phi4. |
