| 摘要 |
PURPOSE:To obtain an ion injection single layer coating element with a material capable of ion injecting by adding Bi to (EuTm)2(FeGa)5O12 or (YEuTm)3 (FeGa)5O12 from garnet liquid phase epitaxial film for a magnetic bubble memory material. CONSTITUTION:In the experiment, when Eu0.63Tm2.17Bi0.20Fe4.33Ga0.67O12 is grown on a (111)Gd3Ga5O12 substrate with melting composition having 0.106mol% of Eu2O3, 0.404mol% of Tm2O3, 8.921mol% of Fe2O3, 0.569mol% of Ga2O3, 75.00mol% of PbO, and 15.00mol% of Bi2O3, a bubble material of 2mum of diameter of thickness h=2.03mum, characteristic length 1=0.16mum, saturable magnetism 4piMs=592Gauss, bubble erasing magnetic field Hcol=394Oe, and anisotropic magnetic field Hk=2,820Oe could be obtained. Magnetostrictive constant of this material is lambda111=-2.11X10<-6>, which is largely improved as compared with lambda111=-1.44X10<-6> of the case containing no Bi. Charged wall can be produced on the surface layer by injecting He<+>, and the bubble can be moved. |
